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IDH16G65C5XKSA2

INFINEON SP001632392

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Description: SiC-D. 650V 16A 1,5V TO220-2 Produttore: INFINEON Matchcode: IDH16G65C5 Rutronik No.: DSKY5238 VPE: 50 MOQ: 50 dimensioni: TO220-2 confezione: TUBE
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V(RRM)
650 V
I(F)per diode
16 A
I(FSM)
124 A
V(F)
1.5 V
Technology
5thinQ!SiC
Automotive
NO
Package
TO220-2
RoHS Status
RoHS-conform
Tipo di confezione
TUBE
Configuration
SINGLE
Mounting
THT
T(j) max
150 °C
Articolo produttore
SP001632392
EAR99
Numero di tariffa doganale
85411000000
Stato
Malaysia
Codice- ABC
A
Tempo di consegna standard
19 Settimane
CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

Summary of Features

  • V br at 650V
  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Target Applications

  • Telecom/server SMPS
  • Solar
  • UPS
  • PC power
  • LED/LCD TV
  • Motor drives
  • HID lighting
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2,41 $
120,50 $

prezzi

50 2,41 $
100 2,30 $
200 2,25 $
300 2,13 $
500 2,03 $

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