IPD60R180C7ATMA1
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Description:
N-CH 600V 13A 180mOhm DPAK
Produttore:
INFINEON
Matchcode:
IPD60R180C7
Rutronik No.:
TMOS1795
VPE:
2500
MOQ:
2500
dimensioni:
DPAK
confezione:
REEL
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- Configuration
- N-CH
- V(DS)
- 600 V
- I(D)at Tc=25°C
- 13 A
- RDS(on)at 10V
- 180 mOhm
- Q(g)
- 24 nC
- P(tot)
- 68 W
- R(thJC)
- 1,832 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOS C7
- Fast bodydiode
- NO
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Tipo di confezione
- REEL
- Articolo produttore
- SP001277630
- EAR99
- Numero di tariffa doganale
- 85412900000
- Stato
- China
- Codice- ABC
- B
- Tempo di consegna standard
- 19 Settimane
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
Summary of Features
- Reduced switching loss parameters such as Q G, C oss, E oss
- Best-in-class figure of merit Q G*R DS(on)
- Increased switching frequency
- Best R (on)*A in the world
- Rugged body diode
Benefits
- Enables increasing switching frequency without loss in efficiency
- Measure showing key parameter for light load and full load efficiency
- Doubling the switching frequency will half the size of magnetic components
- Smaller packages for same R DS(on)
- Can be used in many more positions for both hard and soft switching topologies
Target Applications
- Server
- Telecom
- PC power
- Solar
- Industrial
- USB-PD
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