IGW15N120H3FKSA1
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Description:
IGBT 1200V 30A 2.05V TO247-3
Produttore:
INFINEON
Matchcode:
IGW15N120H3
Rutronik No.:
IGBT1161
VPE:
30
MOQ:
240
dimensioni:
TO247-3
confezione:
TUBE
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- V(CE)
- 1200 V
- I(C)
- 30 A
- V(CEsat)
- 2.40 V
- Package
- TO247-3
- Bodydiode
- NO
- P(tot)
- 217 W
- Automotive
- NO
- t(r)
- 34 nS
- td(off)
- 260 nS
- td(on)
- 21 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- HighSpeed
- Tipo di confezione
- TUBE
- Articolo produttore
- SP000674430
- EAR99
- Numero di tariffa doganale
- 85412900000
- Stato
- China
- Codice- ABC
- A
- Tempo di consegna standard
- 21 Settimane
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering T j(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Excellent cost/performance
- Low switching and conduction losses
- Very good EMI behavior
- A small gate resistor for reduced delay time and voltage overshoot
- Smaller die sizes -> smaller packages
- Best-in-class IGBT efficiency and EMI behavior
Target Applications
- Welding inverters
- Solar inverters
- UPS
- All hard switching applications
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