IPDQ65R080CFD7XTMA1
l'immagine mostrata è solamente rappresentativa
datasheet/scheda tecnica
aggiungi al progetto
Campionature
Download the free Library Loader to convert this file for your ECAD Tool
- Configuration
- N-CH
- V(DS)
- 700 V
- I(D)at Tc=25°C
- 107 A
- RDS(on)at 10V
- 80 mOhm
- Q(g)
- 50 nC
- P(tot)
- 223 W
- R(thJC)
- 0.56 K/W
- Logic level
- No
- Mounting
- SMD
- Automotive
- NO
- Package
- HDSOP-22
- RoHS Status
- RoHS-conform
- Tipo di confezione
- REEL
- Articolo produttore
- SP005537603
- Numero di tariffa doganale
- 85412900000
- Stato
- Malaysia
- Tempo di consegna standard
- 19 Settimane
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Summary of Features
- Ultrafast body diode and very low Qrr
- 650 V breakdown voltage
- Significantly reduced switching losses compared to competition
- Lowest RDS(on) dependency over temperature
Benefits
- Excellent hard-commutation ruggedness
- Extra safety margin for designs with increased bus voltage
- Enabling increased power density
- Outstanding light-load efficiency in industrial SMPS applications
- Improved full-load efficiency in industrial SMPS applications
- Price competitiveness compared to alternative offerings in the market
Potential Applications
Gli articoli presenti nel carrello possono essere ordinati o , se si desiderate aspettare, potete inviarci una richiesta di offerta non vincolante, per gli articoli selezionati
l’e-commerce R24 è dedicato solo ai clienti e non a utenti privati.
